Review Article
Impact of Traveler Weight on the Quality of Cotton Yarn: Examining Strength, Evenness, and Hairiness in Relation to Spinning Performance and Process Variables
Tesfaye Worku*
,
Asaye Dessie
Issue:
Volume 2, Issue 2, December 2025
Pages:
27-30
Received:
20 October 2025
Accepted:
29 October 2025
Published:
26 November 2025
DOI:
10.11648/j.wjmst.20250202.11
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Views:
Abstract: This review looks at how traveler weight impacts cotton yarn quality. Main metrics are strength, evenness, and hairiness. Traveler weight is critical in the ring spinning process. It touches tension, ballooning, and friction during yarn formation. Changes in traveler weight alter spinning tension, affecting fiber alignment and cohesion, which in turn effects yarn strength. Lighter travelers may boost strength by dropping tension but can increase yarn hairiness due to less fiber control. Weightier travelers improve evenness and lower hairiness by raising tension and friction. However, they may weaken yarn strength due to added fiber stress. The relationship between traveler weight and spinning process parameters such as spindle speed, ring diameter, and traveler material is also covered in this review. Taking into account trade-offs between strength, evenness, and hairiness, it looks at research to determine the ideal ratio between yarn quality and traveler weight. The findings emphasize the significance of selecting traveler weight through process optimization and data analysis. The review contains invented data and graphs for industry insights and analysis.
Abstract: This review looks at how traveler weight impacts cotton yarn quality. Main metrics are strength, evenness, and hairiness. Traveler weight is critical in the ring spinning process. It touches tension, ballooning, and friction during yarn formation. Changes in traveler weight alter spinning tension, affecting fiber alignment and cohesion, which in tu...
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Research Article
Advanced Materials for Enhanced Computing Performance: Beyond Silicon Paradigms in High-performance Computing Systems
Mayibongwe Kagiso Madisa*
Issue:
Volume 2, Issue 2, June 2025
Pages:
31-45
Received:
8 September 2025
Accepted:
25 September 2025
Published:
26 November 2025
DOI:
10.11648/j.wjmst.20250202.12
Downloads:
Views:
Abstract: The exponential growth in computational demands has reached a critical inflection point where traditional silicon-based semiconductors face fundamental physical and thermal limitations. This comprehensive analysis examines the transformative potential of advanced materials—specifically silicon carbide (SiC), gallium nitride (GaN), and emerging graphene-based semiconductors—in overcoming performance bottlenecks that constrain contemporary computing systems. Through systematic evaluation of material properties, manufacturing feasibility, and performance characteristics, this research demonstrates that wide bandgap semiconductors offer superior thermal conductivity, electron mobility, and power efficiency compared to conventional silicon. The investigation synthesizes current literature to establish key findings: SiC exhibits threefold improvements in thermal conductivity (490 W/m·K versus silicon's 148 W/m·K) while maintaining superior electrical properties including higher breakdown voltage and electron saturation velocity; GaN demonstrates exceptional high-frequency performance capabilities with electron mobility exceeding 2000 cm2/V·s, enabling switching frequencies above 100 MHz; and graphene presents revolutionary potential with thermal conductivity exceeding 5000 W/m·K and electron mobility approaching 15,000 cm2/V·s, though significant bandgap engineering challenges remain. However, manufacturing analysis reveals substantial obstacles including processing costs 3-10 times higher than silicon equivalents, supply chain vulnerabilities particularly for gallium-based materials, and immature production processes, despite the silicon carbide market's projected growth from USD 802.93 million in 2024 to USD 2614.24 million by 2031 indicating strong industry confidence. The research concludes that hybrid integration approaches represent the most pragmatic pathway for advanced material adoption, enabling gradual technology transition while minimizing economic risks by combining advanced materials' performance advantages in specialized applications with silicon's cost-effectiveness for general computing functions, facilitating incremental adoption that scales with manufacturing capability development and market demand.
Abstract: The exponential growth in computational demands has reached a critical inflection point where traditional silicon-based semiconductors face fundamental physical and thermal limitations. This comprehensive analysis examines the transformative potential of advanced materials—specifically silicon carbide (SiC), gallium nitride (GaN), and emerging grap...
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